parameter max. units v ds drain- source voltage -40 v i d @ t a = 25c continuous drain current, v gs @ -10v -6.2 i d @ t a = 70c continuous drain current, v gs @ -10v -4.9 a i dm pulsed drain current ? -25 p d @t a = 25c power dissipation ? 2.5 p d @t a = 70c power dissipation ? 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c 1/26/01 www.irf.com 1 irf7241 hexfet ? power mosfet pd- 94087 absolute maximum ratings w top view 8 1 2 3 4 5 6 7 d d d g s a d s s v dss r ds(on) max (m w) w) w) w) w) i d -40v 41@v gs = -10v -6.2a 70@v gs = -4.5v -5.0a so-8 symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 50 c/w thermal resistance new trench hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. l trench technology l ultra low on-resistance l p-channel mosfet l available in tape & reel description
irf7241 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.5a, v gs = 0v ? t rr reverse recovery time CCC 32 48 ns t j = 25c, i f = -2.5a q rr reverse recovery charge CCC 45 68 nc di/dt = -100a/s ? source-drain ratings and characteristics a -25 CCC CCC CCC -2.5 CCC s d g ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 400s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -40 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.03 CCC v/c reference to 25c, i d = -1ma CCC 25 41 v gs = -10v, i d = -6.2a ? CCC 45 70 v gs = -4.5v, i d = -5.0a ? v gs(th) gate threshold voltage -1.0 CCC -3.0 v v ds = v gs , i d = -250a g fs forward transconductance 8.9 CCC CCC s v ds = -10v, i d = -6.2a CCC CCC -10 v ds = -32v, v gs = 0v CCC CCC -25 v ds = -32v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 53 80 i d = -6.2a q gs gate-to-source charge CCC 14 21 nc v ds = -32v q gd gate-to-drain ("miller") charge CCC 3.9 5.9 v gs = -10v t d(on) turn-on delay time CCC 24 CCC v dd = -20v ? t r rise time CCC 280 CCC i d = -1.0a t d(off) turn-off delay time CCC 210 CCC r g = 6.0 w t f fall time CCC 100 CCC v gs = -10v c iss input capacitance CCC 3220 CCC v gs = 0v c oss output capacitance CCC 160 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 190 CCC ? = 1.0khz electrical characteristics @ t j = 25c (unless otherwise specified) i gss a m w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns ? surface mounted on 1 in square cu board
irf7241 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -2.70v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -6.2a 2.5 3.0 3.5 4.0 4.5 5.0 -v gs , gate-to-source voltage (v) 0.01 0.10 1.00 10.00 100.00 -i d , drain-to-source current (a ) t j = 25c t j = 150c v ds = -25v 20s pulse width
irf7241 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -6.2a v = -20v ds v = -32v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 -v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irf7241 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) -i , drain current (a) c d v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
irf7241 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 2 6 10 14 18 -v gs, gate -to -source voltage (v) 0.02 0.04 0.06 0.08 0.10 r ds(on) , drain-to -source on resistance ( w ) i d = -6.2a 0 5 10 15 20 25 -i d , drain current (a) 0.02 0.04 0.06 0.08 r ds (on) , drain-to-source on resistance ( w ) v gs = -10v v gs = -4.5v
irf7241 www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 -v gs(th) gate threshold voltage (v) i d = -250a fig 16. typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 20 40 60 80 100 power (w)
irf7241 8 www.irf.com so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millime t ers [inches ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mol d prot rus ions not t o e xce ed 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s olde ring t o a s ubst rate. mol d prot rus ions not t o e xce ed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf7101 (mosfet ) internat ional rectifier logo f7101 yww xxxx part number lot code ww = week y = las t digit of t he ye ar dat e code (yww)
irf7241 www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction t e r m in a l n u m b e r 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/01
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